Training for MOCVD Epitaxy Technology
With our academic and commercial experience, we offer detailed training packages on (Metal Organic Chemical Vapor Deposition) MOCVD and Epitaxial Film Growth.
TRAINING CONTENT- Part-1
- Introduction to MOCVD Technology
- General introduction to MOCVD Systems
- MOCVD Main Components: Mechanical, Electrical, Vacuum, Gas Feed System, Reactor, Control Software, Consumables
- General Maintenance – Preventive Maintenance and Periodic Controls
Training-Part 1 Outcomes:
At the end of this training package, participants will reach the following qualifications;
- Participants will learn the working principles of the entire MOCVD system and its subcomponents.
- They will be able to perform daily, weekly and monthly routine operation procedures.
- They will reach the ability to analyze fault conditions, detect faults and resolve faults.
- They will reach the ability to independently maintain the system and keep it up with full performance.
- They will learn how to perform routine maintenance.
- They will learn precursor and part replacement procedures.
- They will learn to analyze system data.
- They will learn the recipe writing coding language and rules.
TRAINING CONTENT- Part-2
- III-VI Wide Bandgap Semiconductor Materials and Their Properties
- Crystal Structures and Unit Cells
- Types of Crystal Defects
- Epitaxial Thin Film Growth Techniques
- Nitrate- Arsenide- Phosphide Based Semiconductor Materials and Their Properties
- Example Device Applications Based on GaN/GaAs/InP
- Basic Characterization Methods and Examination of Results
- GaN-GaAs-InP Based Layers Detailed Growth Conditions
- GaN Based Growth on Different Substrates
- Creation of Growth Recipe of a Sample Epitaxial Structure
- Interlayer Transitions, Detailed Analysis of Steps in the Recipe
- Growth Process, Preparations, Wafer Loading and Unloading, Pre-Growth Checklist
- Basic Cleaning and Conditioning After Growth.
- Substrate properties, Substrate preparations
- Substrate selection, and features to consider
- HEMT/SiC, HEMT/Al2O3, HEMT/Silicon general features and comparison
- Relation between system conditions and status and growth quality, points to consider
- Interpretation of in-situ measurements
- Reactor conditioning with graphite susceptors used for different diameter wafers
Training-Part 2 Outcomes:
At the end of this training package, participants will reach the following qualifications;
- Participants will be able to transfer an epitaxial structure to a recipe on their own
- Testing the integrity and accuracy of the recipe
- Ability to perform a growth process from beginning to end (pre-growth preparations, growth and post-growth)
- Measurements of the grown structure with basic characterization methods
- Analysing and interpretation of measurement results
- Routine operations and preparations to be made in the system for process health and Epi quality
- Making changes and updates to existing recipes
- Identifying and selecting suitable substrates for the process
- Choosing suitable sources for the process
ADVANCED TRAINING PROGRAM
- Optimization for reducing epitaxial crystal defects
- Determination of layers to be optimized in the structure by interpreting the obtained measurement results, growth parameters to be changed
- Optimization for improving optical and surface properties
- Optimization for improving electrical properties
- Reactor and source conditions affecting crystal quality, points to be optimized in the system according to the growth results
- Collection and interpretation of statistical information about MOCVD the system
- Detailed characterization of the Epiwafer and correlation between the results and the growth parameters
- Design and growth of a completely new epitaxial structure with the aim of producing a real working device
- Film stress management layers and stress-free growth methods
- Reactor thermodynamics and its effect on growth
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