SILICON ON INSULATOR WAFERS
Silicon on Insulator (SOI) is a semiconductor wafer technology that produces higher performing, lower power devices than traditional bulk silicon tecniques. SOI works by placing a thin, insulating layer, such as Silicon Oxide between a thin layer of silicon and silicon substrate.
| Size | 6″,8″ |
| Device Layer Thickness | 100nm – 200µm |
| Thickness Accuracy | Thin layer ±15nm / Thick layer ±0.5µm |
| BOX Layer Thickness | Up to 20µm |
| ITEM | Oxide Layer Specification |
| Thickness | Up to 20µm±5% |
| In-Plane Uniformity | ±0.5% |
| Surface Uniformity | ±0.5% |
| Refractive Index (@1550nm) | 1.44 |
| Wafer Size | Wafer Thickness | Thermal Oxide Film Thickness |
| 4″ | 525µm – 1mm | 15µm, 20µm |
| 6″ | 625µm – 675µm – 1mm | 15µm, 20µm |
| 8″ | 725µm | 15µm, 20µm |
OTHER SERVICES
PECVD Deposited films on various substrates.
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