30W, 28V, 0.5-6GHz GaN RF Transistor
GaN based pre-matched power transistor is a pre-matched power amplifier based on 0.25um GaN HEMT process, which can provide more than 50W output power in DC~6GHz, with high gain, high efficiency, wide frequency band and other characteristics. Can support CW, pulse or any modulated signal.
Features
⚫ Frequency: 0.5 to 6 GHz
⚫ Output Power(Psat): 30 W
⚫ Power Gain: 10dB@5.8GHz
⚫ Typical DE(Psat): 52%@5.8GHz
⚫ Operating Voltage: 28 V
⚫ CW and Pulse capable
Applications
⚫ Base station
⚫ Radio relay station
⚫ Military radar
⚫ Civilian radar
⚫ Test instrumentation
⚫ Jammers
⚫ Microwave oven
TECHNICAL DATA
| Parameter | Min | Type | Max | Units |
| Operating Temp Range | 10 | +25 | 50 | °C |
| Drain Voltage Range, VD | 24 | 28 | 32 | V |
| Drain Bias Current, IDQ | 400 | mA | ||
| Gate Voltage, VG | -2.9 | -2.2 | -2 | V |
| Parameter | Min | Type | Max | Units |
| Breakdown Voltage, BVDG, T = 25°C | 28 | 120 | V | |
| Gate Voltage Range, VG, T = 25°C | -5 | -2.5 | -2 | V |
| Storage Temperature | -55 | 25 | 125 | °C |
| Channel Temperature | 175 | °C |
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