Single Crystal SiC (Silicon Carbide) is one of the high performance Semiconductor materials that is been used in the industry for its high thermal conductivity, high thermal budget, superior resistance to radiation properties. Low lattice mismatch to AlN and GaN makes it one of the first choice to high power, high frequency transistor applications. Moreover availability in market with small to large size gives flexibility to integrate these substrates in to existing fabrication lines. SiC finds large application areas in the Power and RF fields such as High Electron Mobility Transistors (HEMT) and MOSFETs.
3″ (76MM) 4H-High Purity Semi Insulating SiC Substrates
Grade: Production Grade
Diameter: 75.0 mm ±0.2 mm
Thickness: 350.0 µm ± 25.0 µm
Type/Dopant: HPSI (Undoped High Purity Semi Insulating)
MPD: 5<cm2
Primary flat lenght: 22mm± 3.5 mm
Secondary flat lenght: 11mm± 1.6 mm
Surface orientation: (0001) ± 0.5˚
Surface finish: Back side is optical polish, Epi-face is CMP, Rq ≤ 0.35 nm
Primary flat orientation: Perpendicular [1120] plane
Secondary flat orientation: 90.0˚ CW from primary ± 5.0˚, silicon face up
Resistivity >1E5 Ω·cm
TTV ≤10 µm
Warp ≤25 µm
4″ (100MM) 4H-High Purity Semi Insulating SiC Substrates
Grade: Production Grade
Diameter: 100.0 mm +0.0/-0.5 mm
Thickness: 500.0 µm ± 25.0 µm
Type/Dopant: HPSI (High Purity Semi Insulating)
MPD: 1<cm2
Primary flat lenght: 32.5mm± 2.0 mm
Secondary flat lenght: 18mm± 2.0 mm
Surface orientation: (0001) ± 0.5˚
Surface finish: Back side is optical polish, Epi-face is CMP
Primary flat orientation: [1120] ± 5.0˚
Secondary flat orientation: 90.0˚ CW from primary ± 5.0˚, silicon face up
Resistivity >1E8 Ω·cm
TTV ≤10 µm
Warp ≤35 µm
LTV (average, 1 cm2 site) ≤2 µm
6″ (150MM) 4H-High Purity Semi Insulating SiC Substrates
Grade: Production Grade
Diameter: 150.0 mm +0.0/-0.5 mm
Thickness: 500.0 µm ± 25.0 µm
Type/Dopant: Semi Insulating – V doped
MPD: 5<cm2
Surface orientation: (0001) ± 0.5˚
Surface finish: Back side is optical polish, Epi-face is CMP
Resistivity >1E7 Ω·cm
TTV ≤10 µm
Warp ≤35 µm
Bow ≤25 µm
